temt3700f document number 81582 rev. 1.2, 08-mar-05 vishay semiconductors www.vishay.com 1 19032 silicon npn phototransistor description temt3700f is a high spee d silicon npn epitaxial pla- nar phototransistor in a miniature plcc-2 package with integrated ir band pass filter (950 nm). features ? high sensitivity ir filter (950 nm band pass) suitable for near infrared radiation extra wide viewing angle ? = 60 fast response times plcc-2 smd package package notch = collector no base terminal matched to ir emitter tsms3700 and tsml3710 lead-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec applications touch sensors transmissive sensors reflective sensors parts table absolute maximum ratings t amb = 25 c, unless otherwise specified part ordering code remarks TEMT3700F-GS08 TEMT3700F-GS08 moq: 7500 pc (5 reels) temt3700f-gs18 temt3700f-gs18 moq: 8000 pc (1 reel) parameter test condition symbol value unit collector emitter voltage v ceo 70 v emitter collector voltage v eco 5v collector current i c 50 ma collector peak current t p /t 0.1, t p 10 si cm 100 ma total power dissipation t amb 55 c p tot 100 mw junction temperature t j 100 c storage temperature range t stg - 40 to + 100 c soldering temperature t 3 s t sd 260 c thermal resistance junction/ ambient r thja 450 k/w
www.vishay.com 2 document number 81582 rev. 1.2, 08-mar-05 temt3700f vishay semiconductors electrical characteristics t amb = 25 c, unless otherwise specified optical characteristics t amb = 25 c, unless otherwise specified typical characteri stics (tamb = 25 c unless otherwise specified) parameter test condition symbol min ty p. max unit collector emitter breakdown voltage i c = 1 ma v (br)ceo 70 v collector-emitter dark current v ce = 20 v, e = 0 i ceo 1 200 na collector-emitter capacitance v ce = 5 v, f = 1 mhz, e=0 c ceo 3pf parameter test condition symbol min ty p. max unit collector light current e e = 1 mw/cm 2 , = 950 nm, v ce = 5 v i ca 0.25 0.5 ma angle of half sensitivity ? 60 deg wavelength of peak sensitivity p 940 nm range of spectral bandwidth 0.5 860 to 1050 nm collector emitter saturation voltage e e = 1 mw/cm 2 , = 950 nm, i c = 0.1 ma v cesat 0.15 0.3 v rise time / fall time v s = 5 v, i c = 1 ma, = 950 nm, r l = 1 k ? t r / t f 6 s v s = 5 v, i c = 1 ma, = 950 nm, r l = 100 ? t r / t f 2 s cut-off frequency v s = 5 v, i c = 2 ma, r l = 100 ? f c 180 khz figure 1. total power dissipati on vs. ambient temperature 020406080 0 25 50 75 100 125 p Ctotal power dissipation ( mw ) tot t amb C ambient temperature ( c ) 100 94 8308 r thja iure 2colletordarcurrentsambienttemperature 94 8304 20 i - collector dark current ( na ) ceo 100 40 60 80 t amb - ambient temperature ( c) 10 0 10 1 10 2 10 3 10 4 v ce =20v
temt3700f document number 81582 rev. 1.2, 08-mar-05 vishay semiconductors www.vishay.com 3 figure 3. relative collector cu rrent vs. ambient temperature figure 4. collector light current vs. irradiance figure 5. collector light current vs. collector emitter voltage 94 8239 0 0.6 0.8 1.0 1.2 1.4 2.0 i - relative collector current ca rel 20 40 60 80 100 1.6 1.8 v ce =5v e e = 1 mw/cm 2 = 950 nm t amb - ambient temperature ( c) 0.01 0.1 1 0.001 0.01 0.1 1 10 i - collector light current ( ma ) ca e e - irradiance ( mw/ cm 2 ) 10 18967 v ce =5v = 950 nm 0.1 1 10 0.1 1 10 i C collector light current ( ma) ca v ce C collector emitter voltage ( v ) 100 94 8317 e e =1 mw/cm 2 0.5 mw/cm 2 0.2 mw/cm 2 = 950 nm figure 6. collector emitter capac itance vs. collector emitter voltage figure 7. turn on/turn off time vs. collector current figure 8. relative spectral sensitivity vs. wavelength 0.1 1 10 0 2 4 6 8 10 v ce - collector emitter voltage ( v ) 100 94 8294 c - collector emitter capacitance ( pf ) ceo f=1mhz 0 2 8 94 8293 t / t - turn on / turn off time ( s) off i c - collector current ( ma ) on 6 4 v ce =5v r l = 100 = 950 nm t off t on ? 2 046 14 12 10 8 7 50 850 950 1050 0 0.2 0.4 0.6 0.8 1.2 s ( ) C relati v e s pectral s ensiti v it y rel C w a v elengt h ( nm ) 1150 94 8408 1.0
www.vishay.com 4 document number 81582 rev. 1.2, 08-mar-05 temt3700f vishay semiconductors package dimensions in mm 0.4 0.2 0 0.2 0.4 s - relati v e s ensiti v it y rel 0.6 94 8318 0.6 0.9 0.8 0 30 10 20 40 50 60 7 0 80 0. 7 1.0 figure 9. relative radiant sensitivity vs. angular displacement 95 11316 mounting pad layout 3.5 0.2 0.85 1.65 + 0.10 - 0.05 pin identification 2.8 + 0.15 c e 2.2 ? 2.4 3 + 0.15 1.2 2.6 (2.8) 1.6 (1.9) 4 4 area covered with solder resist dimensions: ir and vaporphase (wave soldering) technical drawings according to din specifications
temt3700f document number 81582 rev. 1.2, 08-mar-05 vishay semiconductors www.vishay.com 5 temperature - time profile drypack devices are packed in moistu re barrier bags (mbb) to prevent the products from moisture absorption during transportation and storage. each bag contains a des- iccant. floor life floor life (time between soldering and removing from mbb) must not exceed the time indicated in j-std-020. temt3700f is released for: moisture sensitivity le vel 2, according to jedec, j-std-020 floor life: 1 year conditions: t amb < 30 c, rh < 60 % drying in case of moisture absorption devices should be baked before soldering. conditions see j-std-020 or label. devices taped on reel dry using recommended conditions 192 h @ 40 c (+ 5 c), rh < 5 % figure 10. lead tin (snpb) reflow solder profile max. 160 c full line : typical dotted line : process limits time ( s ) temperature ( c ) lead temperature 90s-120s 300 250 200 150 100 50 0 0 50 100 150 200 250 max. 240 c ca. 230 c 10 s 215 c max40s 2 k/s - 4 k/s 94 8625 adhesive tape component cavity blister tape 94 8670 1.85 1.65 4.0 3.6 3.6 3.4 2.05 1.95 1.6 1.4 4.1 3.9 4.1 3.9 5.75 5.25 8.3 7.7 3.5 3.1 2.2 2.0 0.25 94 8668 anode cathode
www.vishay.com 6 document number 81582 rev. 1.2, 08-mar-05 temt3700f vishay semiconductors missing devices a maximum of 0.5 % of the total number of compo- nents per reel may be missing, exclusively missing components at the beginning and at the end of the reel. a maximum of three consecutive components may be missing, provided this gap is followed by six consecutive components. the tape leader is at least 160 mm and is followed by a carrier tape leader with at least 40 empty comparte- ments. the tape leader may include the carrier tape as long as the cover tape is not connected to the car- rier tape. the least comoponent is followed by a car- rier tape trailer with a least 75 empty compartements and sealed with cover tape. cover tape removal force the removal force lies between 0.1 n and 1.0 n at a removal speed of 5 mm/s. in order to prevent compo- nents from popping out of the bliesters, the cover tape must be pulled off at an angle of 180 with regard to the feed direction. figure 13. beginning and end of reel figure 14. dimensions of reel de-reeling direction tape leader min. 75 empty compartments > 160 mm 40 empty compartments carrier leader carrier trailer 94 8158 180 178 identification 4.5 3.5 2.5 1.5 13.00 12.75 63.5 60.5 14.4 max. 10.0 9.0 120 94 8665 label: vishay type group tape code production code quantity
temt3700f document number 81582 rev. 1.2, 08-mar-05 vishay semiconductors www.vishay.com 7 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performanc e of our products, processes, distribution and operatingsystems with respect to their impact on the hea lth and safety of our empl oyees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the cl ean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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